A nonvolatile random access memory (60) includes a ferroelectric memory array (62). The memory array (62) includes memory cells (86-89 and 91-96) arranged in intersecting rows and columns, where the memory cells (86-89 and 91-96) are coupled to bit lines and word lines. Drive lines are disposed parallel to the bit lines and drive line segments are disposed parallel to the word lines. A drive line segment is coupled to a predetermined number of the memory cells of a row. Coupling transistors (80, 82, 84, and 90) couple a drive line segment to a drive line in response to the word line being selected. The ferroelectric memory array (60) provides the advantage of eliminating a change in the polarization state of non-accessed memory cells connected to a selected drive line, and also provides the advantage of reduced energy consumption.