发明授权
- 专利标题： Semiconductor device with a gettering sink material layer
- 专利标题（中）： 半导体器件具有吸收层材料层
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申请号： US20080申请日： 1993-02-19
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公开(公告)号： US5374842A公开(公告)日： 1994-12-20
- 发明人: Kenji Kusakabe
- 申请人： Kenji Kusakabe
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX4-35179 19920221; JPX5-14891 19930201
- 主分类号： H01L21/322
- IPC分类号： H01L21/322
摘要：
Silicon substrate is provided with silicon single-crystalline wafer, natural oxide film and poly-crystalline silicon film. The thickness of natural oxide film is controlled to be less than 10 .ANG.. Since the thickness of natural oxide film is made less than 10 .ANG., heavy metals travel smoothly from silicon single-crystalline wafer to poly-crystalline silicon film in the process of gettering. In other words, it is possible to enhance gettering effect.
公开/授权文献
- US5945238A Method of making a reusable photolithography mask 公开/授权日：1999-08-31
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