发明授权
US5376810A Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet
response
失效
在硅CCD / S上增加δ-掺杂层以增强紫外线响应
- 专利标题: Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response
- 专利标题(中): 在硅CCD / S上增加δ-掺杂层以增强紫外线响应
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申请号: US173133申请日: 1993-12-21
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公开(公告)号: US5376810A公开(公告)日: 1994-12-27
- 发明人: Michael E. Hoenk , Paula J. Grunthaner , Frank J. Grunthaner , Robert W. Terhune , Michael H. Hecht
- 申请人: Michael E. Hoenk , Paula J. Grunthaner , Frank J. Grunthaner , Robert W. Terhune , Michael H. Hecht
- 申请人地址: CA Pasadena
- 专利权人: California Institute of Technology
- 当前专利权人: California Institute of Technology
- 当前专利权人地址: CA Pasadena
- 主分类号: H01L27/148
- IPC分类号: H01L27/148 ; H01L29/796 ; H01L27/14 ; H01L31/00
摘要:
The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.