发明授权
- 专利标题: Semiconductor laser and a method for producing the same
- 专利标题(中): 半导体激光器及其制造方法
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申请号: US92358申请日: 1993-07-15
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公开(公告)号: US5383214A公开(公告)日: 1995-01-17
- 发明人: Isao Kidoguchi , Satoshi Kamiyama , Kiyoshi Ohnaka
- 申请人: Isao Kidoguchi , Satoshi Kamiyama , Kiyoshi Ohnaka
- 申请人地址: JPX Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX4-189074 19920716; JPX4-285740 19921023
- 主分类号: H01S5/10
- IPC分类号: H01S5/10 ; H01S5/20 ; H01S5/22 ; H01S5/223 ; H01S5/32 ; H01S5/323 ; H01S3/19
摘要:
A semiconductor laser including a semiconductor substrate and a multilayer structure formed upon the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers between which the active layer is interposed, and a current confinement layer for injecting a current into a stripe-shaped predetermined region of the active layer. The current confinement layer comprises a first current blocking layer formed in regions thereof excluding a region corresponding to the predetermined region of the active layer. The first current blocking layer has a refractive index higher than a refractive index of the pair of cladding layers and an energy band gap larger than an energy band gap of the active layer.
公开/授权文献
- USD412592S Light fixture 公开/授权日:1999-08-03