发明授权
- 专利标题： Antifuse circuit structure for use in a field programmable gate array and method of manufacture thereof
- 专利标题（中）： 用于现场可编程门阵列的防漏电路结构及其制造方法
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申请号： US41924申请日： 1993-04-02
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公开(公告)号： US5384481A公开(公告)日： 1995-01-24
- 发明人: Monta R. Holzworth , Richard Klein , Pankaj Dixit , William P. Ingram, III
- 申请人： Monta R. Holzworth , Richard Klein , Pankaj Dixit , William P. Ingram, III
- 申请人地址： CA Santa Clara
- 专利权人： Crosspoint Solutions, Inc.
- 当前专利权人： Crosspoint Solutions, Inc.
- 当前专利权人地址： CA Santa Clara
- 主分类号： H01L21/82
- IPC分类号： H01L21/82 ; H01L21/3205 ; H01L21/768 ; H01L23/52 ; H01L23/525 ; H01L27/118 ; H01L27/02
摘要：
An antifuse structure particularly suitable for field programmable gate arrays is presented. In most present day processes the antifuse structure is formed with a refractory metal layer, amorphous silicon layer and refractory metal layer sandwiched between two metal interconnection lines. Unprogrammed resistances of very high values, programmed resistances of very low values, short programming times and desirable programming voltages are among the advantages realized.
公开/授权文献
- USD380148S Dispensing system 公开/授权日：1997-06-24
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