发明授权
- 专利标题: Power lasers with semiconductor filter
- 专利标题(中): 带半导体滤波器的功率激光器
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申请号: US949125申请日: 1992-09-23
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公开(公告)号: US5384801A公开(公告)日: 1995-01-24
- 发明人: Jean-Paul Pocholle , Jean-Marc Breteau , Michel Papuchon , Claude Puech
- 申请人: Jean-Paul Pocholle , Jean-Marc Breteau , Michel Papuchon , Claude Puech
- 申请人地址: FRX Puteaux
- 专利权人: Thomson-CSF
- 当前专利权人: Thomson-CSF
- 当前专利权人地址: FRX Puteaux
- 优先权: FRX9111740 19910924
- 主分类号: G02B5/20
- IPC分类号: G02B5/20 ; H01S3/08 ; H01S3/18
摘要:
A laser is capable of working at a wavelength L.sub.2 from an active material capable of generating radiating emissions at at least two wavelengths L.sub.1 and L.sub.2, through the presence of a semiconductor plate in the laser cavity. Notably, the laser can generate wavelengths ranging from 1.4 .mu.m to 2 .mu.m, a range in which the optical damage threshold of the eye is high, from an Nd.sup.3+ doped YAG having numerous radiating emission wavelengths ranging from 0.946 .mu.m to 1.8 .mu.m.
公开/授权文献
- US5916167A Surgical probe apparatus and system 公开/授权日:1999-06-29
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