发明授权
- 专利标题： Process of making chalcopyrite structure semiconductor film
- 专利标题（中）： 制造黄铜矿结构半导体膜的工艺
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申请号： US195948申请日： 1994-02-14
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公开(公告)号： US5389572A公开(公告)日： 1995-02-14
- 发明人: Takayuki Negami , Mikihiko Nishitani , Shigemi Kohiki , Takahiro Wada
- 申请人： Takayuki Negami , Mikihiko Nishitani , Shigemi Kohiki , Takahiro Wada
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX5-025287 19930215
- 主分类号： H01L21/363
- IPC分类号： H01L21/363 ; H01L31/032 ; H01L31/04 ; H01L33/28 ; H01L33/30 ; H01L33/40 ; H01S5/00 ; H01L21/22
摘要：
A I-III-VI.sub.2 chalcopyrite semiconductor film containing a Group VII element as a dopant, and methods to produce such a chalcopyrite film are provided. The chalcopyrite film of the present invention has stoichiometric composition, and electrical characteristics such as p-n conduction type, carrier concentration and the like are controlled.
公开/授权文献
- US4918302A Arrangement for detecting a state of light or brightness 公开/授权日：1990-04-17