发明授权
- 专利标题: Semiconductor laser and manufacturing method therefor
- 专利标题(中): 半导体激光器及其制造方法
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申请号: US69855申请日: 1993-06-01
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公开(公告)号: US5392304A公开(公告)日: 1995-02-21
- 发明人: Haruo Tanaka , Masato Mushiage , Kaoru Kusunoki
- 申请人: Haruo Tanaka , Masato Mushiage , Kaoru Kusunoki
- 申请人地址: JPX Kyoto
- 专利权人: Rohm Co., Ltd.
- 当前专利权人: Rohm Co., Ltd.
- 当前专利权人地址: JPX Kyoto
- 优先权: JPX4-144225 19920604
- 主分类号: H01S5/00
- IPC分类号: H01S5/00 ; H01S5/02 ; H01S5/022 ; H01S3/04
摘要:
A semiconductor laser adaptable for a 3-beam method, including a semiconductor laser chip bonded on a primary plane of a flat submount, the semiconductor laser chip having a thickness of 30 to 80 .mu.m is provided. Also provided is a method for manufacturing a semiconductor laser including the steps of: sequentially stacking layers of compound semiconductor materials on a semiconductor substrate to form a semiconductor laser wafer; mechanically abrading the semiconductor substrate to make it thin; subjecting the mechanically abraded face of the semiconductor substrate to a chemical treatment; forming an electrode film on both sides of the semiconductor laser wafer thus treated; and cutting the semiconductor laser wafer into chips and bonding each of the chips on a submount.
公开/授权文献
- US6107898A Microwave channelized bandpass filter having two channels 公开/授权日:2000-08-22