发明授权
- 专利标题： Method of manufacturing a hetero bipolar transistor
- 专利标题（中）： 异质双极晶体管的制造方法
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申请号： US280199申请日： 1994-07-25
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公开(公告)号： US5399511A公开(公告)日： 1995-03-21
- 发明人: Shin-ichi Taka , Kouji Kimura , Hiroshi Naruse , Kuniaki Kumamaru
- 申请人： Shin-ichi Taka , Kouji Kimura , Hiroshi Naruse , Kuniaki Kumamaru
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX4-121283 19920415
- 主分类号： H01L29/165
- IPC分类号： H01L29/165 ; H01L21/331 ; H01L29/205 ; H01L29/73 ; H01L29/737 ; H01L21/265
摘要：
The specification discloses a hetero bipolar transistor which comprises a semiconductor substrate, a first silicon layer serving as a collector, a first silicon-germanium layer serving as a base, a second silicon layer serving as a collector, and a second silicon-germanium layer. A side wall of the second silicon-germanium layer is in contact with side walls of the first silicon layer, the first silicon-germanium layer and the second silicon layer. The second silicon-germanium layer is disposed to surround the first silicon layer, the first silicon-germanium layer, and the second silicon layer, and has an energy band gap substantially the same as that of the first silicon-germanium layer.
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