发明授权
- 专利标题： Method of uniformly diffusing impurities into semiconductor wafers
- 专利标题（中）： 将杂质均匀地扩散到半导体晶片的方法
-
申请号： US909600申请日： 1992-07-07
-
公开(公告)号： US5401686A公开(公告)日： 1995-03-28
- 发明人: Hiromi Kiyose
- 申请人： Hiromi Kiyose
- 申请人地址： JPX Kyoto
- 专利权人： Rohm Co., Ltd.
- 当前专利权人： Rohm Co., Ltd.
- 当前专利权人地址： JPX Kyoto
- 优先权： JPX3-223423 19910807
- 主分类号： H01L21/22
- IPC分类号： H01L21/22 ; C30B31/12 ; D21H27/00 ; H01L21/223
摘要：
The temperature of the front heater is set to a higher value than the set temperature of the center heater and the temperature of the rear heater is set to a lower value than the set temperature of the center heater to thereby provide such a temperature gradient that the temperature of a center heater region gradually rises from the rear side toward the front side and the impurity diffusion is accelerated under the temperature gradient, whereby it is possible to compensate for the decrease in the quantity of the diffused impurity caused by the lowering of the impurity concentration of the impurity gas gradually from the rear side toward the front side, so that the impurity is uniformly diffused into the wafers located in the core pipe.
公开/授权文献
- US4672701A Polypropylene fiber baffle for waterbed mattress 公开/授权日：1987-06-16
信息查询
IPC分类:
