发明授权
- 专利标题： Silicon wafers having controlled precipitation distribution
- 专利标题（中）： 具有受控沉淀分布的硅晶片
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申请号： US64013申请日： 1993-05-13
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公开(公告)号： US5403406A公开(公告)日： 1995-04-04
- 发明人: Robert Falster , Giancarlo Ferrero , Graham Fisher , Massimiliano Olmo , Marco Pagani
- 申请人： Robert Falster , Giancarlo Ferrero , Graham Fisher , Massimiliano Olmo , Marco Pagani
- 申请人地址： ITX Novara
- 专利权人： MEMC Electronic Materials, SpA
- 当前专利权人： MEMC Electronic Materials, SpA
- 当前专利权人地址： ITX Novara
- 优先权： ITX48481/90 19901115
- 主分类号： C30B33/02
- IPC分类号： C30B33/02 ; H01L21/02 ; H01L21/26 ; H01L21/322 ; H01L21/324
摘要：
A silicon wafer containing oxygen precipitate nucleation centers (or oxygen precipitates) and having a first face, a second face, and a central plane equidistant between the first and second faces. The nucleation centers (or oxygen precipitates) have a non-uniform distribution between the first and second faces with a maximum density of the nucleation centers (or oxygen precipitates) being in a region which is between the first face and the central plane and nearer to the first face than the central plane. The density of the nucleation centers (or oxygen precipitates) increases from the first face to the region of maximum density and decreasing from the region of maximum density to the central plane.
公开/授权文献
- USD387055S Portable telephone 公开/授权日：1997-12-02
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