发明授权
- 专利标题: Method for manufacturing a capacitor of a semiconductor device
- 专利标题(中): 半导体装置的电容器的制造方法
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申请号: US25421申请日: 1993-03-01
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公开(公告)号: US5405801A公开(公告)日: 1995-04-11
- 发明人: Ki-man Han , Chang-gyu Hwang , Dug-dong Kang , Young-Jae Choi , Joo-young Yoon
- 申请人: Ki-man Han , Chang-gyu Hwang , Dug-dong Kang , Young-Jae Choi , Joo-young Yoon
- 申请人地址: KRX Kyongki
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KRX Kyongki
- 优先权: KRX92-3265 19920228; KRX92-6291 19920415; KRX92-9619 19920603; KRX92-21231 19921112
- 主分类号: H01L27/04
- IPC分类号: H01L27/04 ; H01L21/02 ; H01L21/3213 ; H01L21/3215 ; H01L21/334 ; H01L21/822 ; H01L21/8242 ; H01L27/10 ; H01L27/108 ; H01L21/70
摘要:
A method for manufacturing first electrode of a capacitor of a semiconductor device is disclosed. After forming a polycrystalline layer composed of grains with microscopic structure to include an impurity in them, the polycrystalline layer is etched to cut the boundary portions of the grains, thereby allowing the surface of the polycrystalline layer to be rugged. The micro-trenches or micro-pillars are formed by using the oxide layer or an anisotropic etching after exposing the surface of the first rugged polycrystalline layer, and epitaxial grains are formed by epitaxial growth, so that cell capacitance can be further increased. The simple process allows the formation of a reliable semiconductor device having regularity and reproducibility, and capable of increasing and adjusting the cell capacitance easily.
公开/授权文献
- US5913377A Traction control system for a four-wheel drive vehicle 公开/授权日:1999-06-22