发明授权
- 专利标题: Field effect transistor with landing pad
- 专利标题(中): 场效应晶体管与着陆垫
-
申请号: US159897申请日: 1993-12-01
-
公开(公告)号: US5407859A公开(公告)日: 1995-04-18
- 发明人: Kuo-Hua Lee , Chun-Ting Liu , Ruichen Liu
- 申请人: Kuo-Hua Lee , Chun-Ting Liu , Ruichen Liu
- 申请人地址: NJ Murray Hill
- 专利权人: AT&T Corp.
- 当前专利权人: AT&T Corp.
- 当前专利权人地址: NJ Murray Hill
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/768 ; H01L29/78 ; H01L21/44
摘要:
A field effect transistor is fabricated with a window pad layer that is patterned using a patterned dielectric with sublithographic spacing as an etch mask. Desirable attributes of the transistor include small junction capacitance.
公开/授权文献
- US4869726A Method and an apparatus for marking fabric piles 公开/授权日:1989-09-26