发明授权
- 专利标题： Semiconductor device having an interconnection pattern
- 专利标题（中）： 具有互连图案的半导体器件
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申请号： US234512申请日： 1994-04-28
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公开(公告)号： US5418397A公开(公告)日： 1995-05-23
- 发明人: Toshiaki Ogawa
- 申请人： Toshiaki Ogawa
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX2-178288 19900704
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/3213 ; H01L29/46 ; H01L29/54 ; H01L29/62
摘要：
Disclosed is a method of forming an interconnection pattern which causes no disconnection even when making contact with water in the atmosphere. An interconnection layer is formed on a semiconductor substrate. The interconnection layer is selectively etched by employing a halogen-type gas, to form an interconnection pattern. Ultraviolet rays are directed onto the interconnection pattern in the atmosphere including a hydrogen gas. This method avoids generation of hydrogen halogenide which causes corrosion of metal interconnections even when the metal interconnections make contact with water in the atmosphere, thereby to prevent disconnections of the metal interconnections.
公开/授权文献
- US4336690A Cryogenic pump with radiation shield 公开/授权日：1982-06-29