发明授权
- 专利标题： Method of manufacturing a thin film SOI MOSFET
- 专利标题（中）： 制造薄膜SOI MOSFET的方法
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申请号： US269287申请日： 1994-06-30
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公开(公告)号： US5424225A公开(公告)日： 1995-06-13
- 发明人: Yasuo Yamaguchi , Tadashi Nishimura
- 申请人： Yasuo Yamaguchi , Tadashi Nishimura
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： DEX63-299136 19881125
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L21/336 ; H01L29/78 ; H01L29/786 ; H01L21/265 ; H01L21/266
摘要：
An MOS field effect transistor comprises a channel region (6) of a first conductivity type formed in a semiconductor layer (3) on an insulator substrate (2), a source region (8) and a drain region (9) of a second conductivity type formed in contact with one and the other sides of the channel region (6) in the semiconductor layer (3), respectively, a body region (7) formed in contact with at least a part of the channel region (6) and a part of a periphery of the source region (8) in the semiconductor layer (3) and having a higher impurity concentration than that of the channel region (6), a gate dielectric thin film (4) and a gate electrode (5) formed on the channel region (6), and a conductor (14a) connected in common to the source region (8) and the body region (7).
公开/授权文献
- US4359641A Liquid scintillators for optical fiber applications 公开/授权日：1982-11-16
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