发明授权
US5424575A Semiconductor device for SOI structure having lead conductor suitable
for fine patterning
失效
具有用于精细图案化的引线导体的SOI结构的半导体器件
- 专利标题： Semiconductor device for SOI structure having lead conductor suitable for fine patterning
- 专利标题（中）： 具有用于精细图案化的引线导体的SOI结构的半导体器件
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申请号： US890787申请日： 1992-06-01
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公开(公告)号： US5424575A公开(公告)日： 1995-06-13
- 发明人: Katsuyoshi Washio , Tohru Nakamura , Takahiro Onai , Masatada Horiuchi , Takashi Uchino
- 申请人： Katsuyoshi Washio , Tohru Nakamura , Takahiro Onai , Masatada Horiuchi , Takashi Uchino
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-130977 19910603
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L27/12 ; H01L29/06 ; H01L29/73 ; H01L29/72
摘要：
A semiconductor device has an electrically insulating substrate and a semiconductor layer formed on the insulating substrate. A plurality of semiconductor regions are defined so as to be joined to each other to form at least two homojunctions in the semiconductor layer. A lead conductor for one of the semiconductor regions which is required to have a small thickness has a specific structure such that the lead conductor is in contact with the one semiconductor region at the main surface of the semiconductor layer for electrical connection therebetween and extends over that portion of the semiconductor layer which contributes to definition of at least one of the semiconductor regions other than the first-mentioned one semiconductor region.
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