发明授权
- 专利标题： Method of making a thin film transistor
- 专利标题（中）： 制造薄膜晶体管的方法
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申请号： US974183申请日： 1992-11-10
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公开(公告)号： US5427962A公开(公告)日： 1995-06-27
- 发明人: Makoto Sasaki , Hiromitsu Ishii , Kazuhiro Sasaki
- 申请人： Makoto Sasaki , Hiromitsu Ishii , Kazuhiro Sasaki
- 申请人地址： JPX Tokyo
- 专利权人： Casio Computer Co., Ltd.
- 当前专利权人： Casio Computer Co., Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-326776 19911115; JPX4-182806 19920618; JPX4-182807 19920618; JPX4-182808 19920618
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/786 ; H01L21/265
摘要：
A method of manufacturing a thin-film transistor which comprises the steps of forming a gate electrode on an insulating substrate, a gate insulating film covering the gate electrode, and an i-type a-Si layer on the gate insulating film, forming a blocking film made of metal such as Cr or the like on a channel-forming region of the i-type a-Si layer, and forming an n-type a-Si layer covering the i-type a-Si layer and the blocking film, forming a metal layer on the n-type a-Si layer, and etching a predetermined portion of the n-type a-Si layer and a predetermined portion of the metal layer, thereby forming a source electrode and a drain electrode. That portion of the blocking film which is located below a gap between the source electrode and the drain electrode is removed from the i-type a-Si layer.
公开/授权文献
- US4222072A Video player/recorder with non-linear mark length modulation 公开/授权日：1980-09-09
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