发明授权
- 专利标题: Semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路器件
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申请号: US152670申请日: 1993-11-16
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公开(公告)号: US5428281A公开(公告)日: 1995-06-27
- 发明人: Kunio Seki , Yuichi Ohkubo
- 申请人: Kunio Seki , Yuichi Ohkubo
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX4-330932 19921117
- 主分类号: H02P6/06
- IPC分类号: H02P6/06 ; H02P6/08 ; H02P6/02
摘要:
A semiconductor integrated circuit device incorporates a voltage step-up (boost) circuit which produces a stepped-up (boosted) voltage higher than the power voltage based on a periodic pulse signal generated internally or supplied from the outside. The stepped-up voltage is supplied to the emitter of a pnp driving transistor that produces a drive current for the output transistor on the voltage source side which is the one of a pair of npn output transistors in push-pull configuration. The voltage step-up circuit has its current supply capacity varied in response to the current flowing through the output transistor or driving transistor.
公开/授权文献
- US4351582A Adapting electrical connector 公开/授权日:1982-09-28
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