发明授权
US5444753A X-ray lithography mask, light exposure apparatus and process therefore
失效
因此,X射线光刻掩模,曝光装置和工艺
- 专利标题: X-ray lithography mask, light exposure apparatus and process therefore
- 专利标题(中): 因此,X射线光刻掩模,曝光装置和工艺
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申请号: US203752申请日: 1994-03-01
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公开(公告)号: US5444753A公开(公告)日: 1995-08-22
- 发明人: Masami Hayashida , Yutaka Watanabe
- 申请人: Masami Hayashida , Yutaka Watanabe
- 申请人地址: JPX Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX3-077201 19910318
- 主分类号: G03F1/22
- IPC分类号: G03F1/22 ; G03F7/20 ; H01L21/027 ; G21K5/00
摘要:
Disclosed are an X-ray lithography mask, an exposure apparatus and an exposure process such as an X-ray lithography exposure apparatus and an X-ray lithography exposure process. An X-ray lithography mask includes an X-ray transmission membrane, a transfer pattern depicted on the X-ray transmission membrane and a frame for supporting the X-ray transmission membrane. The transfer pattern is depicted on the basis of a changing direction of a film thickness profile of the X-ray transmission membrane. In the exposure apparatus and process, a changing direction of an intensity profile of a radiation light illuminated on an exposure area of a mask is coincident with a changing direction of a film thickness profile of a light transmission membrane on the mask and an illumination time of the radiation light for the exposure area is changed on the basis of the intensity profile of the radiation light and the thickness profile of the light transmission membrane so that the intensity of a transfer patter image formed by the transmission of the radiation light through the light transmission membrane is rendered uniform.
公开/授权文献
- USD310999S Electronic enclosure or similar article 公开/授权日:1990-10-02
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