发明授权
- 专利标题： Epitaxial wafer and process for producing the same
- 专利标题（中）： 外延晶片及其制造方法
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申请号： US69672申请日： 1993-06-01
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公开(公告)号： US5445897A公开(公告)日： 1995-08-29
- 发明人: Tadashige Satoh , Hisanori Fujita
- 申请人： Tadashige Satoh , Hisanori Fujita
- 申请人地址： JPX Tokyo JPX Tokyo
- 专利权人： Mitsubishi Kasei Polytec Company,Mitsubishi Kasei Corporation
- 当前专利权人： Mitsubishi Kasei Polytec Company,Mitsubishi Kasei Corporation
- 当前专利权人地址： JPX Tokyo JPX Tokyo
- 优先权： JPX1-303677 19891122
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L33/00
摘要：
In order to grow a GaAs.sub.1-x P.sub.x fixed-composition layer of excellent quality, which has a predetermined composition x, over a GaAs or GaP single crystal substrate, a varied-composition layer is formed between the substrate and the fixed-composition layer. The varied-composition layer comprises at least two varied-composition layer portions and at least one fixed-composition layer portion with a predetermined thickness that is formed between the varied-composition layer portions, whereby dislocations caused by lattice mismatch with the GaP substrate are settled in the varied-composition layer portions and recovered in the fixed-composition layer portion between the varied-composition layer portions, thereby minimizing the dislocations, and thus making it possible to obtain a GaAs.sub.1-x P.sub.x layer of excellent crystal quality, which has a predetermined composition x.
公开/授权文献
- US4784167A Apparatus for the care of contact lenses 公开/授权日：1988-11-15