Invention Grant
- Patent Title: Monolithic silicon nitride having high fracture toughness
- Patent Title (中): 具有高断裂韧性的单片氮化硅
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Application No.: US168439Application Date: 1993-12-17
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Publication No.: US5449649APublication Date: 1995-09-12
- Inventor: Chien-Wei Li , Mohammad Behi , Jean Yamanis
- Applicant: Chien-Wei Li , Mohammad Behi , Jean Yamanis
- Assignee: Li; Chien-Wei,Behi; Mohammad,Yamanis; Jean
- Current Assignee: Li; Chien-Wei,Behi; Mohammad,Yamanis; Jean
- Main IPC: C04B35/593
- IPC: C04B35/593 ; C04B35/587
Abstract:
A monolithic silicon nitride ceramic is densified at temperatures lower than 2000.degree. C. and heat treated at temperatures greater than 2000.degree. C. in the presence of at least 6.5 w % of multi-component sintering aids. This monolithic silicon nitride has a highly acicular microstructure characterized by .beta.-Si.sub.3 N.sub.4 grains having an average grain width ranging from about 1 to 1.5 .mu.m and average apparent aspect ratio greater than 1.8, Chevron Notch fracture toughness greater than 9 MPa.multidot.m.sup.1/2, R-curve behavior, high Weibull modulus, excellent damage tolerance, high thermal conductivity, and other desirable properties.
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