发明授权
US5451529A Method of making a real time ion implantation metal silicide monitor
失效
制造实时离子注入金属硅化物监测器的方法
- 专利标题： Method of making a real time ion implantation metal silicide monitor
- 专利标题（中）： 制造实时离子注入金属硅化物监测器的方法
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申请号： US270764申请日： 1994-07-05
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公开(公告)号： US5451529A公开(公告)日： 1995-09-19
- 发明人: Shun-Liang Hsu , Chun-Yi Shih
- 申请人： Shun-Liang Hsu , Chun-Yi Shih
- 申请人地址： TWX Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人地址： TWX Hsinchu
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; H01L23/544 ; H01L21/00
摘要：
A novel technique for the real time monitoring of ion implant doses has been invented. This is the first real-time monitor to cover the high dosage range (10E13 to 10E16 ions/sq. cm.). The underlying principle of this new technique is the increase in the resistance of a metal silicide film after ion implantation. Measurement of this increase in a silicide film that has been included in a standard production wafer provides an index for correlation with the implanted ion dose.
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