发明授权
US5460034A Method for measuring and analyzing surface roughness on semiconductor
laser etched facets
失效
测量和分析半导体激光刻蚀面上表面粗糙度的方法
- 专利标题: Method for measuring and analyzing surface roughness on semiconductor laser etched facets
- 专利标题(中): 测量和分析半导体激光刻蚀面上表面粗糙度的方法
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申请号: US917546申请日: 1992-07-21
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公开(公告)号: US5460034A公开(公告)日: 1995-10-24
- 发明人: Robert W. Herrick
- 申请人: Robert W. Herrick
- 申请人地址: DC Washington
- 专利权人: The United States of America as represented by the Secretary of the Air Force
- 当前专利权人: The United States of America as represented by the Secretary of the Air Force
- 当前专利权人地址: DC Washington
- 主分类号: G01B15/08
- IPC分类号: G01B15/08 ; G01Q80/00 ; H01J37/22 ; G01N27/00 ; H01J37/26
摘要:
A scanning electron microscope is used to scan the etched facet edge to produce digital data representative of its profile. A Fourier transform of the edge profile is produced and the resulting plurality of spatial frequency components can be used to generate a first low frequency waveform component indicative of lack of precise edge definition, a midrange frequency component indicative of poor liftoff samples, and a high frequency component indicative of metal grain size. A tilt adjustment feature of the electron microscope is optionally used to advantageously magnify the shape of the profile in the y direction.