- 专利标题: Packaged semiconductor device having stress absorbing film
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申请号: US384836申请日: 1995-02-07
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公开(公告)号: US5466888A公开(公告)日: 1995-11-14
- 发明人: Lim T. Beng , Chai T. Chong , Masazumi Amagai , Ichiro Anjoh , Junichi Arita , Kunihiro Tsubosaki , Masahiro Ichitani , Darvin Edwards
- 申请人: Lim T. Beng , Chai T. Chong , Masazumi Amagai , Ichiro Anjoh , Junichi Arita , Kunihiro Tsubosaki , Masahiro Ichitani , Darvin Edwards
- 申请人地址: JPX Tokyo TX Dallas
- 专利权人: Hitachi, Ltd.,Texas Instruments, Inc.
- 当前专利权人: Hitachi, Ltd.,Texas Instruments, Inc.
- 当前专利权人地址: JPX Tokyo TX Dallas
- 优先权: JPX3-057476 19910320; JPX3-057477 19910320; JPX3-081451 19910320
- 主分类号: H01L23/31
- IPC分类号: H01L23/31 ; H01L23/495 ; H01L23/28
摘要:
A packaged semiconductor device has a semiconductor chip and leads formed over the chip with an electrically insulating film interposed therebetween and a packaging material for sealing the chip and the inner lead portions of the leads. The electrically insulating film has such an area as to provide a peripheral portion not covered by parts of the inner lead portions of the leads for strengthening adherence of the electrically insulating film to the packaging material and to the chip. The electrically insulating film has a thickness substantially in a range from 80 .mu.m to 200 .mu.m for absorbing stress which may be produced in the packaged semiconductor device when subjected to variations of the ambient temperature. A stress absorption film may be formed between the electrically insulating film and the semiconductor chip for absorbing stress which may be produced in the packaged semiconductor device when subjected to variations of the ambient temperature.