发明授权
- 专利标题: Method of fabricating a thin film transistor
- 专利标题(中): 制造薄膜晶体管的方法
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申请号: US979261申请日: 1992-11-20
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公开(公告)号: US5470762A公开(公告)日: 1995-11-28
- 发明人: Mitsufumi Codama , Noriaki Kondo
- 申请人: Mitsufumi Codama , Noriaki Kondo
- 申请人地址: JPX Kanagawa
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JPX Kanagawa
- 优先权: JPX3-340338 19911129
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; H01L21/3065 ; H01L21/336 ; H01L27/12 ; H01L29/78 ; H01L29/786 ; H01L21/00
摘要:
A thin film transistor and a producing method therefor having a semiconductor layer which is formed in an islandish form and constitutes a channel forming region, a source region and a drain region, wherein the edge portion of the islandish semiconductor layer is so designed as to be gradually or monotonously thinned toward the edge thereof to prevent the gate insulating film covering the active layer from being thinned at the edge portion of the semiconductor layer. The gate insulating film is also smoothly formed to prevent an electric field concentration phenomenon at the edge portion.
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