发明授权
US5470762A Method of fabricating a thin film transistor 失效
制造薄膜晶体管的方法

Method of fabricating a thin film transistor
摘要:
A thin film transistor and a producing method therefor having a semiconductor layer which is formed in an islandish form and constitutes a channel forming region, a source region and a drain region, wherein the edge portion of the islandish semiconductor layer is so designed as to be gradually or monotonously thinned toward the edge thereof to prevent the gate insulating film covering the active layer from being thinned at the edge portion of the semiconductor layer. The gate insulating film is also smoothly formed to prevent an electric field concentration phenomenon at the edge portion.
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