发明授权
- 专利标题： Thin film magnetoresistive head which includes a domain suppressing layer and method for manufacturing the same
- 专利标题（中）： 具有畴抑制层的薄膜磁阻磁头及其制造方法
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申请号： US851927申请日： 1992-03-16
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公开(公告)号： US5471358A公开(公告)日： 1995-11-28
- 发明人: Shigeru Tadokoro , Shinji Narishige , Hiroaki Koyanagi , Tetsuo Kobayashi
- 申请人： Shigeru Tadokoro , Shinji Narishige , Hiroaki Koyanagi , Tetsuo Kobayashi
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-049811 19910314
- 主分类号： G11B5/31
- IPC分类号： G11B5/31 ; G11B5/39 ; G11B5/147
摘要：
In a magnetoresistive head, a domain suppressing layer is formed under each of opposite ends of a magnetoresistive film. The domain suppressing layer is composed of a first ferromagnetic film, an antiferromagnetic film and a second ferromagnetic film which are laminated one over another in this order. Since the spin distribution of the antiferromagnetic film is transmitted to the magnetoresistive film via the second ferromagnetic film, a stable longitudinal bias magnetic field can be achieved, irrespective of the degree of contamination of the surface of the ferromagnetic film.