发明授权
- 专利标题： Method for producing a wafer with a monocrystalline silicon carbide layer
- 专利标题（中）： 用单晶碳化硅层制造晶片的方法
-
申请号： US136115申请日： 1993-10-13
-
公开(公告)号： US5471946A公开(公告)日： 1995-12-05
- 发明人: Christoph Scholz , Franz Koehl , Thomas Weber
- 申请人： Christoph Scholz , Franz Koehl , Thomas Weber
- 申请人地址： DEX Munich
- 专利权人： CS Halbleiter-und Solartechnologie GmbH
- 当前专利权人： CS Halbleiter-und Solartechnologie GmbH
- 当前专利权人地址： DEX Munich
- 优先权： DEX4234508.1 19921013
- 主分类号： C30B25/02
- IPC分类号： C30B25/02 ; C30B29/36 ; H01L21/205 ; H01L21/36 ; C30B25/16
摘要：
To produce a large-surface wafer, a monocrystalline SiC layer (4) is grown epitaxially on a monocrystalline Si layer (1) provided with a nucleation layer (3) by carbonization. On the monocrystalline SiC layer (4), a polycrystalline SiC layer (5) is deposited. The Si layer is then etched away, resulting in a wafer consisting of a compound of monocrystalline and polycrystalline SiC layers (4, 5) and meeting the highest demands of semiconductor technology.
公开/授权文献
信息查询
IPC分类:
