发明授权
US5473565A Method of flash writing with small operation current and semiconductor memory circuit according to the method 失效
根据该方法,使用小操作电流的闪存写入方法和半导体存储器电路

  • 专利标题: Method of flash writing with small operation current and semiconductor memory circuit according to the method
  • 专利标题(中): 根据该方法,使用小操作电流的闪存写入方法和半导体存储器电路
  • 申请号: US300190
    申请日: 1994-09-02
  • 公开(公告)号: US5473565A
    公开(公告)日: 1995-12-05
  • 发明人: Takashi Kusakari
  • 申请人: Takashi Kusakari
  • 申请人地址: JPX Tokyo
  • 专利权人: NEC Corporation
  • 当前专利权人: NEC Corporation
  • 当前专利权人地址: JPX Tokyo
  • 优先权: JPX5-228392 19930914
  • 主分类号: G11C11/409
  • IPC分类号: G11C11/409 G11C7/20 G11C7/22 G11C11/401 G11C7/00
Method of flash writing with small operation current and semiconductor
memory circuit according to the method
摘要:
The present invention provides a semiconductor memory circuit which can restrict the increase of an operation current in a flash write mode to a minimum even when there are problems caused in the manufacturing process such as short-circuits in the wiring. A timing control circuit of the semiconductor memory circuit of the present invention comprises an FW latch signal generation circuit and a latch circuit both for detecting that a row address strobe signal, an RAS signal and a flash write enable signal inputted have become active, and an FW gate signal generation circuit for activating the FW gate signal for only a limited fixed time determined by a delay circuit when an FW gate activation signal is outputted from the latch circuit which has detected the activation of both signals. With the FW gate signal activated, the flash write gate switch turns active for performing the flash write activity. After the flash write activity is finished, the FW gate signal becomes inactive immediately even when the RAS signal is active.
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