发明授权
US5479369A Semiconductor integrated circuit device and semiconductor memory device
失效
半导体集成电路器件和半导体存储器件
- 专利标题： Semiconductor integrated circuit device and semiconductor memory device
- 专利标题（中）： 半导体集成电路器件和半导体存储器件
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申请号： US375877申请日： 1995-01-20
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公开(公告)号： US5479369A公开(公告)日： 1995-12-26
- 发明人: Tetsuya Matsumura , Satoshi Kumaki , Shinichi Nakagawa
- 申请人： Tetsuya Matsumura , Satoshi Kumaki , Shinichi Nakagawa
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-301997 19911118
- 主分类号： G11C11/417
- IPC分类号： G11C11/417 ; G11C7/10 ; H01L27/10 ; H03K3/356 ; G11C7/00
摘要：
In a semiconductor integrated circuit device having a data latch function, one of two inverters constituting a data latch circuit is formed of a PMOS transistor and an NMOS transistor, with the source terminal of the NMOS transistor being connected to a terminal for applying a reset signal. The reset signal is applied to an inverter through the NMOS transistor, and the inverter inverts the reset signal and resets the data latch circuit. Since one inverter of the data latch circuit is formed of the PMOS transistor and the NMOS transistor, the setting/resetting function of the semiconductor integrated circuit device can readily be implemented.
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