发明授权
- 专利标题: Micro channel element and method of manufacturing the same
- 专利标题(中): 微通道元件及其制造方法
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申请号: US160857申请日: 1993-12-03
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公开(公告)号: US5482598A公开(公告)日: 1996-01-09
- 发明人: Kazuo Isaka , Takayuki Yagi , Takeshi Miyazaki
- 申请人: Kazuo Isaka , Takayuki Yagi , Takeshi Miyazaki
- 申请人地址: JPX Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX4-328119 19921208
- 主分类号: C12M1/00
- IPC分类号: C12M1/00 ; B01J19/00 ; B81B1/00 ; C25F3/12 ; C25F3/30 ; F15C4/00 ; G01N30/02 ; G01N30/60 ; H01L21/306
摘要:
A micro channel element includes a semiconductor substrate and a channel. The micro channel element is produced as follows. A mask having an opening with a desired pattern is formed on a surface of the semiconductor substrate. The semiconductor substrate on which the mask is formed is dipped in a solution of hydrofluoric acid or a solution mixture of hydrofluoric acid and ethyl alcohol. A cathode is arranged near the surface of the substrate dipped in the solution. An anode is connected to the other surface of the semiconductor substrate. A porosity is imparted to a portion of the surface of the semiconductor substrate which corresponds to the opening of the mask by applying a voltage across the cathode and anode. A high-temperature treatment is performed for the semiconductor substrate removed from the solution to increase the pore size and extend the branches of pores of the porous portion on the surface of the semiconductor substrate, thereby forming the micro channel.
公开/授权文献
- US6157229A Skew compensation device 公开/授权日:2000-12-05
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