发明授权
US5485020A Semiconductor device including a thin film transistor and a wiring
portion having the same layered structure as and being integral with a
source region or drain region of the transistor
失效
包括薄膜晶体管和布线部分的半导体器件具有与晶体管的源极区域或漏极区域相同的层叠结构并与之成一体的布线部分
- 专利标题： Semiconductor device including a thin film transistor and a wiring portion having the same layered structure as and being integral with a source region or drain region of the transistor
- 专利标题（中）： 包括薄膜晶体管和布线部分的半导体器件具有与晶体管的源极区域或漏极区域相同的层叠结构并与之成一体的布线部分
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申请号： US286989申请日： 1994-08-08
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公开(公告)号： US5485020A公开(公告)日： 1996-01-16
- 发明人: Yutaka Hirai , Yoshiyuki Osada , Takashi Nakagiri , Katsunori Hatanaka
- 申请人： Yutaka Hirai , Yoshiyuki Osada , Takashi Nakagiri , Katsunori Hatanaka
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX58-42816 19830315; JPX58-42817 19830315; JPX58-42818 19830315
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; H01L29/786 ; H01L29/04 ; H01L31/20
摘要：
In a semiconductor device comprising a wiring to be connected to the source region or the drain region of a thin film transistor, at least a portion of the wiring comprising a wiring part having the same cross-sectional structure as said source region or said drain region, and said wiring part being formed continuously with said source region or said drain region simultaneously with the respective end portions of said wiring portions, said source region and said drain region formed in such a manner that the edge thereof is set back from the end of the semiconductor layer constituting the thin film transistor.
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