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US5486486A Process for the manufacture of an integrated voltage limiter and stabilizer in flash EEPROM memory devices 失效
用于在闪存EEPROM存储器件中制造集成式限压器和稳压器的工艺

Process for the manufacture of an integrated voltage limiter and
stabilizer in flash EEPROM memory devices
摘要:
A process for the manufacture of an integrated voltage limiter and stabilizer component in a flash EEPROM memory device comprises a step of formation of an N type lightly doped well on a single-crystal silicon substrate; a step of formation of an active area on the surface of said N type well; a step of growth of a thin gate oxide layer over said active area; a step of implantation of a first heavy dose of N type dopant into said N type well to obtain an N type region; a step of implantation of a second heavy dose, higher than said first heavy dose, of N type dopant into said N type region to obtain an N+ contact region to both the N type well and said N type region; a step of implantation of a third heavy dose, higher than said first heavy dose, of P type dopant into said N type region to form a P+ region.
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