发明授权
- 专利标题: Light valve device using semiconductive composite substrate
- 专利标题(中): 光阀装置采用半导体复合基板
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申请号: US264635申请日: 1994-06-23
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公开(公告)号: US5486708A公开(公告)日: 1996-01-23
- 发明人: Kunihiro Takahashi , Yoshikazu Kojima , Hiroaki Takasu , Nobuyoshi Matsuyama , Hitoshi Niwa , Tomoyuki Yoshino , Tsuneo Yamazaki
- 申请人: Kunihiro Takahashi , Yoshikazu Kojima , Hiroaki Takasu , Nobuyoshi Matsuyama , Hitoshi Niwa , Tomoyuki Yoshino , Tsuneo Yamazaki
- 申请人地址: JPX
- 专利权人: Seiko Instruments Inc.
- 当前专利权人: Seiko Instruments Inc.
- 当前专利权人地址: JPX
- 优先权: JPX2-309437 19901115; JPX3-6561 19910123; JPX3-22420 19910216; JPX3-79330 19910411; JPX3-79337 19910411
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; G02F1/1335 ; G02F1/1362 ; H01L21/336 ; H01L21/762 ; H01L21/77 ; H01L21/84 ; H01L29/786 ; H01L33/00
摘要:
A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate. The multi-layer substrate is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film. A transparent opposite substrate is also formed so that the optical transparency of the electrooptical substance is controlled by the switching elements.
公开/授权文献
- US4438977A Apparatus for removing material 公开/授权日:1984-03-27