发明授权
- 专利标题: Process for purifying hydrogen gas
- 专利标题(中): 氢气净化方法
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申请号: US373032申请日: 1995-01-17
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公开(公告)号: US5489327A公开(公告)日: 1996-02-06
- 发明人: Kenji Otsuka , Noboru Takemasa
- 申请人: Kenji Otsuka , Noboru Takemasa
- 申请人地址: JPX Tokyo
- 专利权人: Japan Pionics Co., Ltd.
- 当前专利权人: Japan Pionics Co., Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX6-058353 19940304
- 主分类号: B01D53/14
- IPC分类号: B01D53/14 ; B01D53/86 ; C01B3/56 ; B01D53/04
摘要:
There is diclosed a process for purifying hydrogen gas which comprises removing impurities such as nitrogen, oxygen, methane, carbon monoxide, carbon dioxide and moisture contained in a crude hydrogen gas by bringing the crude hydrogen gas into contact under heating with a hydride of a zirconium alloy such as Zr-V, Zr-V-Ni, Zr-V-Cr, Zr-V-Co, Zr-V-Fe, Zr-V-Cu, Zr-V-Ni-Cr, Zr-V-Ni-Co and Zr-V-Cr-Fe. By virtue of using the above Zr alloy hydride, the process enables highly advanced purification of crude hydrogen gas by removing such impurities as above to a level as low as 1 ppb or less in high safety and efficiency at low installation and running costs.
公开/授权文献
- US4780752A Luminescent semiconductor component 公开/授权日:1988-10-25
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