发明授权
US5489543A Method of forming a MOS device having a localized anti-punchthrough
region
失效
形成具有局部防穿透区域的MOS器件的方法
- 专利标题： Method of forming a MOS device having a localized anti-punchthrough region
- 专利标题（中）： 形成具有局部防穿透区域的MOS器件的方法
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申请号： US347880申请日： 1994-12-01
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公开(公告)号： US5489543A公开(公告)日： 1996-02-06
- 发明人: Gary Hong
- 申请人： Gary Hong
- 申请人地址： TWX Hsinchu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TWX Hsinchu
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/10 ; H01L29/78 ; H01L21/8234
摘要：
A method of forming a MOS device having a localized anti-punchthrough region, which is adjacent to but is not in contact with source/drain regions of the MOS device. A trench is formed by depositing a conducting layer on an oxide layer located on a channel region of the MOS device. The trench is used as a self-alignment mask for a subsequent implantation process to form the localized anti-punchthrough region.
公开/授权文献
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