- 专利标题: Thin film transistor structure having increased on-current
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申请号: US372289申请日: 1989-06-27
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公开(公告)号: US5493129A公开(公告)日: 1996-02-20
- 发明人: Eiji Matsuzaki , Akihiro Kenmotsu , Yoshifumi Yoritomi , Toshiyuki Koshita , Takao Takano , Mitsuo Nakatani
- 申请人: Eiji Matsuzaki , Akihiro Kenmotsu , Yoshifumi Yoritomi , Toshiyuki Koshita , Takao Takano , Mitsuo Nakatani
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX63-159098 19880629; JPX63-159102 19880629
- 主分类号: H01L29/417
- IPC分类号: H01L29/417 ; H01L29/786 ; H01L29/04
摘要:
A thin film transistor structure for use in driving liquid crystal display elements has a semiconductor active layer, a control electrode layer underlying the active layer with an insulating layer interposed therebetween and first and second main electrode layers formed on or above the active layer in a spaced relation with each other to define a channel in the active layer in cooperation with the control electrode layer between the main electrode layers. The active layer has a first peripheral edge portion generally perpendicular to the direction of the channel and a second peripheral edge portion generally not perpendicular to the direction of the channel. The first and/or second main electrode layer extends over the first and/or second peripheral edge portion of the active layer such that at least a part of the first peripheral edge portion and/or at least part of the second peripheral edge portion of the active layer has its side face directly covered with the main electrode layer.