发明授权
- 专利标题: Integrated magnetoresistive sensor
- 专利标题(中): 集成磁阻传感器
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申请号: US453940申请日: 1995-05-30
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公开(公告)号: US5502325A公开(公告)日: 1996-03-26
- 发明人: Marko Sokolich , Hiroyuki Yamasaki , Huai-Tung Yang
- 申请人: Marko Sokolich , Hiroyuki Yamasaki , Huai-Tung Yang
- 申请人地址: CA Los Angeles
- 专利权人: Hughes Aircraft Company
- 当前专利权人: Hughes Aircraft Company
- 当前专利权人地址: CA Los Angeles
- 主分类号: G01R33/09
- IPC分类号: G01R33/09 ; H01L27/22 ; H01L43/08 ; H01L43/12 ; H01L29/82 ; H01L43/00
摘要:
A magnetoresistor is monolithically integrated with an active circuit by growing a thin film magnetoresistor on a semiconductor substrate after the substrate has been doped and annealed for the active devices. The magnetoresistor is grown through a window in a mask, with the mask and magnetoresistor materials selected such that the magnetoresistor is substantially non-adherent to the mask. InSb is preferred for the magnetoresistor, Si.sub.3 N.sub.4 for the mask and GaAs for the substrate. The non-adherence allows the mask to be substantially thinner than the magnetoresistor without impairing the removal of the mask after the magnetoresistor has been established.