发明授权
- 专利标题： Process for forming gate silicon oxide film for MOS transistors
- 专利标题（中）： 用于形成用于MOS晶体管的栅氧化硅膜的工艺
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申请号： US172167申请日： 1993-12-23
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公开(公告)号： US5506178A公开(公告)日： 1996-04-09
- 发明人: Atsushi Suzuki , Akihide Kashiwagi , Kazuhiko Tokunaga , Toshihiko Suzuki
- 申请人： Atsushi Suzuki , Akihide Kashiwagi , Kazuhiko Tokunaga , Toshihiko Suzuki
- 申请人地址： JPX Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX4-357895 19921225; JPX5-287494 19931022; JPX5-086836 19931223
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/51 ; H01L21/324
摘要：
A process for forming a silicon oxide film comprising:(a) heat treating a semiconductor substrate at a temperature of 1,150.degree. C. or higher under a 100% hydrogen gas atmosphere for a period of 10 to 600 minutes; and(b) forming a silicon oxide film on the semiconductor substrate by wet oxidation, followed by heat treating said silicon oxide film under an inert gas atmosphere containing a halogen element.
公开/授权文献
- US6120156A Optical element and optical system having the same 公开/授权日：2000-09-19