发明授权
- 专利标题： Composite semiconductor substrate having a single crystal substrate and a single crystal layer formed thereon
- 专利标题（中）： 具有单晶基板和形成在其上的单晶层的复合半导体基板
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申请号： US277022申请日： 1994-08-24
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公开(公告)号： US5506433A公开(公告)日： 1996-04-09
- 发明人: Tatsuya Ohori , Isamu Hanyu , Fumitoshi Sugimoto , Yoshihiro Arimoto
- 申请人： Tatsuya Ohori , Isamu Hanyu , Fumitoshi Sugimoto , Yoshihiro Arimoto
- 申请人地址： JPX Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX4-032016 19920219
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/02 ; H01L21/20 ; H01L27/01 ; H01L29/04
摘要：
A silicon-on-insulator (SOI) structure having a single crystal layer of a group III-V compound semiconductor material contacting a single crystal substrate of sapphire such that a principal surface of the single crystal layer establishes an intimate contact with a corresponding principal surface of the single crystal substrate and the single crystal layer, and the single crystal substrate are bonded with each other while elevating a temperature.
公开/授权文献
- US4921408A Non-icing quiet air-operated pump 公开/授权日：1990-05-01