发明授权
- 专利标题: Sense amplifier circuit for semiconductor memory device
- 专利标题(中): 用于半导体存储器件的感测放大器电路
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申请号: US387636申请日: 1995-02-13
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公开(公告)号: US5508966A公开(公告)日: 1996-04-16
- 发明人: Yasunobu Nakase
- 申请人: Yasunobu Nakase
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX4-189278 19920716
- 主分类号: G11C11/416
- IPC分类号: G11C11/416 ; G11C7/06 ; H03K5/02 ; G11C7/02
摘要:
In order to increase the speed, reduce the number of components and lower power consumption in a sense amplifier circuit for reading data held in a selected memory cell, current difference appearing on a data line is converted to potential difference directly by a current mirror circuit in accordance with data held in a selected memory cell. This current mirror circuit includes a diode for clamping the potential of the data line, and a transistor which is connected with this diode in a current mirror arrangement. A sense current flows through the diode in accordance with the data held in the selected memory cell, a corresponding current flows through the transistor by a current mirror operation, and the sense current is monitored. The monitored sense current is converted to a voltage signal indicating data of the selected memory cell.
公开/授权文献
- USD320643S Hand held sprayer 公开/授权日:1991-10-08
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