发明授权
- 专利标题: Test circuit in clock synchronous semiconductor memory device
- 专利标题(中): 时钟同步半导体存储器件中的测试电路
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申请号: US246582申请日: 1994-05-19
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公开(公告)号: US5511029A公开(公告)日: 1996-04-23
- 发明人: Seiji Sawada , Yasuhiro Konishi
- 申请人: Seiji Sawada , Yasuhiro Konishi
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX5-122439 19930525
- 主分类号: G11C11/401
- IPC分类号: G11C11/401 ; G11C11/407 ; G11C11/409 ; G11C29/00 ; G11C29/26 ; G11C29/34 ; G11C29/40 ; G11C7/00
摘要:
In order to reduce a test time for a synchronous type memory device, a compression circuit compresses a plurality of memory cell data which are inputted in a plurality of read registers provided for a data output terminal to 1-bit data. A bank selection circuit selects an output of the compression circuit of either a bank #A or a bank #B. A tristate inverter buffer passes the 1-bit compression data selected by the bank selection circuit in accordance with a test mode command signal. The data output terminal outputs compressed data of a plurality of bits of memory cells. Thus, it is possible to simultaneously determine pass/fail of a plurality of memory cells, thereby reducing the test time.
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