发明授权
US5523612A Method of manufacturing an antifuse with doped barrier metal layer and
resulting antifuse
失效
制造具有掺杂阻挡金属层的反熔丝的方法和所得到的反熔丝
- 专利标题： Method of manufacturing an antifuse with doped barrier metal layer and resulting antifuse
- 专利标题（中）： 制造具有掺杂阻挡金属层的反熔丝的方法和所得到的反熔丝
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申请号： US154842申请日： 1993-11-19
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公开(公告)号： US5523612A公开(公告)日： 1996-06-04
- 发明人: Yakov Karpovich
- 申请人： Yakov Karpovich
- 申请人地址： CA Santa Clara
- 专利权人： Crosspoint Solutions, Inc.
- 当前专利权人： Crosspoint Solutions, Inc.
- 当前专利权人地址： CA Santa Clara
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/82 ; H01L23/52 ; H01L23/525 ; H01L29/00
摘要：
A method of forming an antifuse in an integrated circuit having an insulating layer on a semiconductor substrate is provided. The method comprises forming a first metal interconnection layer on the insulating layer; forming a first barrier metal layer on the first metal interconnection layer; forming an amorphous silicon layer on the first barrier metal layer; forming another barrier metal layer atop the amorphous silicon layer; and forming a second metal interconnection layer on the second barrier metal layer. In at least one of the barrier metal forming steps, the barrier metal is formed by sputtering a barrier metal target which includes a semiconductor dopant, such as dopant.
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