发明授权
- 专利标题: Semiconductor device with LDD structure
- 专利标题(中): 具LDD结构的半导体器件
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申请号: US445018申请日: 1995-05-22
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公开(公告)号: US5532508A公开(公告)日: 1996-07-02
- 发明人: Seiji Kaneko , Tomoya Baba
- 申请人: Seiji Kaneko , Tomoya Baba
- 申请人地址: JPX Osaka
- 专利权人: Sharp Kabushiki Kaisha
- 当前专利权人: Sharp Kabushiki Kaisha
- 当前专利权人地址: JPX Osaka
- 优先权: JPX5-65285 19930324
- 主分类号: H01L21/265
- IPC分类号: H01L21/265 ; H01L21/336 ; H01L29/10 ; H01L29/78 ; H01L29/76 ; H01L29/94
摘要:
A method for manufacturing a semiconductor device including steps of forming a gate oxide film and a gate electrode on a semiconductor substrate; implanting impurity ions of the same conductivity as the substrate in an oblique direction at a first tilt angle to the normal line of the substrate and with a first acceleration voltage and dose, while rotating the substrate about the normal line thereof; implanting impurities of the same conductivity as the substrate in the same manner except for using a tilt angle to the normal line which is greater and a dose which is smaller than that of the first tilt angle and dose; and forming source and drain regions by implanting impurity ions of the opposite conductivity to the substrate into the substrate, followed by performing a thermal treatment.
公开/授权文献
- USD363340S Filter plate unit 公开/授权日:1995-10-17