Invention Grant
- Patent Title: Low temperature formation of silicided shallow junctions by ion implantation into thin silicon films
- Patent Title (中): 通过离子注入到薄硅膜中，低温形成硅化浅结
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Application No.: US415666Application Date: 1995-04-03
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Publication No.: US5536676APublication Date: 1996-07-16
- Inventor: Huang-Chung Cheng , Cheng-Tung Lin , Chi-Hung Chao
- Applicant: Huang-Chung Cheng , Cheng-Tung Lin , Chi-Hung Chao
- Applicant Address: TWX Taipei
- Assignee: National Science Council
- Current Assignee: National Science Council
- Current Assignee Address: TWX Taipei
- Main IPC: H01L21/225
- IPC: H01L21/225 ; H01L21/285 ; H01L21/283
Abstract:
A method for forming silicided shallow junctions, wherein impurities are implanted into a silicon layer formed over a silicon substrate. A metal layer selected from one of platinum (Pt), palladium (Pd), nickel (Ni) and cobalt (Co) is deposited over the silicon layer. At least one low temperature annealing process is carried out to form a silicide layer as well as the shallow junctions. Pre-anneal of the silicon layer and post-anneal of the silicide between 450.degree. and 600.degree. C. are also employed.
Public/Granted literature
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