- 专利标题： Method of forming low resistance contacts at the junction between regions having different conductivity types
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申请号： US393709申请日： 1995-02-24
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公开(公告)号： US5541455A公开(公告)日： 1996-07-30
- 发明人: Robert L. Hodges
- 申请人： Robert L. Hodges
- 申请人地址： TX Carrollton
- 专利权人： SGS-Thomson Microelectronics, Inc.
- 当前专利权人： SGS-Thomson Microelectronics, Inc.
- 当前专利权人地址： TX Carrollton
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/285 ; H01L21/768 ; H01L21/8244 ; H01L27/11 ; H01L29/78 ; H01L29/786 ; H01L29/76 ; H01L23/48 ; H01L23/52 ; H01L29/94
摘要：
A thin film transistor structure having a first and a second polycrystalline silicon layer of different conductivity types (P and N) has a high resistance contact at the resultant P-N junction. This contact resistance is reduced by forming TiSi.sub.2 (titanium disilicide) or other refractory metal silicides such as cobalt or molybdenum in specific regions, namely the P-N junction contact. Titanium disilicide consumes the portion of the second polycrystalline silicon layer in the P-N contact junction and at the same time consumes a small portion of the underlying first polycrystalline silicon layer, such that the high resistance P-N junction now no longer exists.
公开/授权文献
- USD332123S Golf club head 公开/授权日：1992-12-29