Invention Grant
US5547897A Photo-assisted nitrogen doping of II-VI semiconductor compounds during
epitaxial growth using an amine
失效
使用胺进行外延生长期间II-VI半导体化合物的光辅助氮掺杂
- Patent Title: Photo-assisted nitrogen doping of II-VI semiconductor compounds during epitaxial growth using an amine
- Patent Title (中): 使用胺进行外延生长期间II-VI半导体化合物的光辅助氮掺杂
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Application No.: US259944Application Date: 1994-06-15
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Publication No.: US5547897APublication Date: 1996-08-20
- Inventor: Nikhil R. Taskar , Dennis Gallagher , Donald R. Dorman
- Applicant: Nikhil R. Taskar , Dennis Gallagher , Donald R. Dorman
- Applicant Address: NY New York
- Assignee: Philips Electronics North America Corporation
- Current Assignee: Philips Electronics North America Corporation
- Current Assignee Address: NY New York
- Main IPC: C30B29/48
- IPC: C30B29/48 ; C23C16/18 ; C30B25/02 ; C30B25/10 ; H01L21/205 ; H01L21/365 ; H01L21/22
Abstract:
The concentration of N acceptors in an as-grown epitaxial layer of a II-VI semiconductor compound is enhanced by the use of tertiary butyl amine as the dopant carrier, and is further enhanced by the use of photo-assisted growth using illumination whose wavelength is within the range of 200-250 nm.
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