Invention Grant
- Patent Title: Metal oxide semiconductor transistor and a method for manufacturing the same
- Patent Title (中): 金属氧化物半导体晶体管及其制造方法
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Application No.: US567718Application Date: 1995-12-05
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Publication No.: US5548143APublication Date: 1996-08-20
- Inventor: Yong-hee Lee
- Applicant: Yong-hee Lee
- Applicant Address: KRX Suwon
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KRX Suwon
- Priority: KRX93-7337 19930429
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336 ; H01L29/10 ; H01L29/80 ; H01L21/265
Abstract:
AMOS transistor with enhanced electrical characteristics and a method for manufacturing the same. In the channel region, a first impurity region is provided for adjusting a threshold voltage, a second impurity region is provided which serves as a diffusion barrier, and a third impurity region is provided for preventing a punchthrough. These regions are formed sequentially at subsequently shallower depths in the substrate. The disclosed transistor minimizes short-channel effects and punchthrough without reducing the current driving capability of the device.
Public/Granted literature
- US5074904A Naphthindazole-4,9-quinones and use thereof for controlling undesirable plant growth Public/Granted day:1991-12-24
Information query
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