发明授权
US5554489A Method of forming a fine resist pattern using an alkaline film covered
photoresist
失效
使用碱性膜覆盖的光致抗蚀剂形成精细抗蚀剂图案的方法
- 专利标题： Method of forming a fine resist pattern using an alkaline film covered photoresist
- 专利标题（中）： 使用碱性膜覆盖的光致抗蚀剂形成精细抗蚀剂图案的方法
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申请号： US353256申请日： 1994-12-02
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公开(公告)号： US5554489A公开(公告)日： 1996-09-10
- 发明人: Takeo Ishibashi , Eiichi Ishikawa , Itaru Kanai
- 申请人： Takeo Ishibashi , Eiichi Ishikawa , Itaru Kanai
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX4-221444 19920820
- 主分类号： G03F7/26
- IPC分类号： G03F7/26 ; G03F7/09 ; H01L21/027 ; H01L21/30 ; G03K5/00
摘要：
A forming method of a fine resist pattern improve so as to form a fine pattern of high accuracy can be obtained. A positive-type photoresist 1 including naphthoquinone diazide and novolak resin is applied on a substrate. An anti-reflection film adjusted to alkalinity is applied on positive-type photoresist 1. Positive-type photoresist 1 on which anti-reflection film 9 is applied is selectively irradiated. Positive-type photoresist 1 is developed.
公开/授权文献
- US5110515A Method of encapsulating semiconductor chips 公开/授权日：1992-05-05