发明授权
- 专利标题: Aperture for use in electron beam system for pattern writing
- 专利标题(中): 用于电子束系统的孔径用于图案写入
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申请号: US375487申请日: 1995-01-19
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公开(公告)号: US5557110A公开(公告)日: 1996-09-17
- 发明人: Katsuyuki Itoh
- 申请人: Katsuyuki Itoh
- 申请人地址: FRX
- 专利权人: NEC Corporation
- 当前专利权人: NEC Corporation
- 当前专利权人地址: FRX
- 主分类号: H01L21/027
- IPC分类号: H01L21/027 ; G01D4/00 ; G05B19/042 ; H01J37/09 ; H01J37/317 ; H04L12/28 ; H04M11/00
摘要:
Window-like openings are cut through an aperture with cell projecting blocks using an electron beam system with pattern writing capability, and isolated patterns are supported by microbridges in respective openings. Widths of the microbridges are less than the resolution limitation of the electron beam, and thereby isolated patterns, such as frame-shaped shading patterns, can be written of a resist film, and the through-put of the lithography process can be increased. The aperture with cell projecting blocks can be formed so as to utilize both positive and negative resist film masks.
公开/授权文献
- US4468038A Broadhead assembly for arrow 公开/授权日:1984-08-28
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