发明授权
- 专利标题： Semiconductor device having insulated gate bipolar transistor
- 专利标题（中）： 具有绝缘栅双极晶体管的半导体器件
-
申请号： US460942申请日： 1995-06-05
-
公开(公告)号： US5559348A公开(公告)日： 1996-09-24
- 发明人: Kiyoto Watabe , Ikunori Takata , Masana Harada
- 申请人： Kiyoto Watabe , Ikunori Takata , Masana Harada
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX6-277429 19941111
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L29/739 ; H01L29/786 ; H01L29/74 ; H01L23/58 ; H01L27/01
摘要：
A semiconductor device which allows an ON-state voltage to be lower than that of a conventional device and a method of manufacturing such a device. In this semiconductor device, a gate electrode is formed to have a planar area of its region covering a first base layer larger than that of its region covering a second base layer, thereby increasing a cathode short-circuit ratio of a cathode-shorted diode equivalent to this semiconductor device. As a result, a lower voltage than conventional ON-state can be obtained.
公开/授权文献
- US5129496A Automatic locking brake 公开/授权日：1992-07-14
信息查询
IPC分类:
